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Volumn 389-393, Issue , 2002, Pages 795-798

Improvements in electrical properties of N-type-Implanted 4H-Sic substrates using high-temperature rapid thermal annealing

(6) Senzaki, Junji a Harada, Shinsuke b Kosugi, Ryoji a Suzuki, Seiji c Fukuda, Kenji a Arai, Kazuo a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

b R&D Association for Future Electron Devices (Japan)

c UPR (Japan)

Author keywords

Depth profile; High Temperature rapid thermal annealing; Ion implantation; Sheet resistance; Surface morphology

Indexed keywords

DEPTH PROFILING; ION IMPLANTATION; MORPHOLOGY; PHOSPHORUS; RAPID THERMAL ANNEALING; SHEET RESISTANCE; SURFACE MORPHOLOGY; DOPING (ADDITIVES); ELECTRIC RESISTANCE; HIGH TEMPERATURE APPLICATIONS; HIGH TEMPERATURE EFFECTS;

4H-SIC SUBSTRATE; ELECTRICAL ACTIVATION; HIGH TEMPERATURE; IMPLANTED SAMPLES; N-TYPE DOPANTS; POSTIMPLANTATION ANNEALING; SURFACE REGION; SHEET RESISTANCE;

SILICON CARBIDE;

EID: 0036429052 PISSN: 02555476 EISSN: 16629752 Source Type: Book Series
DOI: 10.4028/www.scientific.net/MSF.389-393.795 Document Type: Conference Paper

Times cited : (14)

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