Electrical characterization of native-oxide InAlP/GaAs metal-oxide- semiconductor heterostructures using impedance spectroscopy

Journal of Applied Physics

Volumn 95, Issue 8, 2004, Pages 4209-4212

  Li, Xiang ^a   Cao, Y ^a   Hall, D C ^a   Fay, P ^a   Zhang, X ^b,c   Dupuis, R D ^b,c  

^a University of Notre Dame   (United States)

^b The University of Texas at Austin   (United States)

^c GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT MODEL PARAMETERS; CONDUCTION BAND EDGES; INTERFACE STATES; SWEPT-FREQUENCY IMPEDANCE SPECTROSCOPY;

ACTIVATION ENERGY; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC IMPEDANCE; HETEROJUNCTIONS; HYDROGEN PEROXIDE; LEAKAGE CURRENTS; MISFET DEVICES; MOLECULAR BEAM EPITAXY; MOS CAPACITORS; OPTIMIZATION; OXIDATION; SEMICONDUCTING INDIUM; TRANSMISSION ELECTRON MICROSCOPY;

MOS DEVICES;

EID: 2342622200     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1669078     Document Type: Article

References (12)

1. M. Passlack, J. K. Abrokwah, R. Droopad, Z. Yu, C. Overgaard, S. I. Yi, M. Hale, J. Sexton, and A. C. Kummel, IEEE Electron Device Lett. 23, 508 (2002).
2. K. Iiyama, Y. Kita, Y. Ohta, M. Nasuno, S. Takamiya, K. Higashimine, and N. Ohtsuka, IEEE Trans. Electron Devices 49, 1856 (2002).
3. P. D. Ye, G. D. Wilk, J. Kwo, B. Yang, H.-J. L. Gossmann, M. Frei, S. N. G. Chu, J. P. Mannaerts, M. Sergent, M. Hong, K. K. Ng, and J. Bude, IEEE Electron Device Lett. 24, 209 (2003).
4. C. B. DeMelo, D. C. Hall, G. L. Snider, D. Xu, G. Kramer, and N. El-Zein, Electron. Lett. 36, 84 (2000).
5. E. I Chen, N. Holonyak, Jr., and S. A. Maranowski, Appl. Phys. Lett. 66, 2688 (1995).
6. P. J. Barrios, D. C. Hall, G. L. Snider, T. H. Kosel, U. Chowdhury, and R. D. Dupuis, Proceedings of the International Symposium: III-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-Fourth State-Of-The-Art Program On Compound Semiconductors (SOTAPOCS XXXIV), edited by F. Ren, D. N. Buckley, S. N. G. Chu, and S. J. Pearton (The Electrochemical Society Proceedings Peenington, N.J., 2001), p. 258.
7. A. L. Holmes, Ph.D Thesis, The University of Texas at Austin, 1999.
8. H. Hasegawa and T. Sawada, Thin Solid Films 103, 119 (1983).
9. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982).
10. S. Kochowski, K. Nitsch, and R. Paszkiewicz, Thin Solid Films 348, 180 (1999).
11. S. R. Dhariwal and B. M. Deoraj, Electron. Lett. 26, 2110 (1990).
12. G. W. Charache and E. W. Maby, J. Appl. Phys. 78, 3488 (1995).