Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applications

Applied Physics Letters

Volumn 83, Issue 20, 2003, Pages 4226-4228

  Liu, Po Tsun ^a   Chang, T C ^b   Tsai, T M ^c   Lin, Z W ^c   Chen, C W ^c   Chen, B C ^a   Sze, S M ^a  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CROSSLINKING; DESORPTION; DIELECTRIC PROPERTIES; DISSOLUTION; ELECTRON BEAM LITHOGRAPHY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; IRRADIATION; SOLUTIONS;

ELECTRON BEAM DIRECT PATTERNING; LOW PERMITTIVITY SILICATE; TETRAMETHYL AMMONIUM HYDROXIDE; THERMAL DESORPTION SPECTROSCOPY;

SILICATES;

EID: 0348041881     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1628401     Document Type: Article

References (17)

1. International Technology Roadmap for Semiconductors (ITRS), Santa Clara, CA, November, 2001.
2. K. Postava, T. Yamaguchi, and M. Horie, Appl. Phys. Lett. 79, 2231 (2001).
3. A. Mallikarjunan, S. P. Murarka, and T. M. Lu, Appl. Phys. Lett. 79, 1855 (2001).
4. T. Sugiyama, T. Tai, and T. Sugino, Appl. Phys. Lett. 80, 4214 (2002).
5. H. J. Lee, E. K. Lin, B. J. Bauer, W. I. Wu, B. K. Hwang, and W. D. Gray, Appl. Phys. Lett. 82, 1084 (2003).
6. H. C. Liou, J. Duel, V. Finh, Q. Han, P. Sakthivel, and R. Ruffin, Mater. Res. Soc. Symp. Proc. 612, D5.11 (2000).
7. P. T. Liu, T. C. Chang, Y. S. Mor, C. W. Chen, T. M. Tsai, C. J. Chu, F. M. Pan, and S. M. Sze, Electrochem. Solid-State Lett. 5, G11 (2002).
8. T. Kikkawa, T. Nagahara, and H. Matsuo, Appl. Phys. Lett. 78, 2557 (2001).
9. S. D. Berger and J. M. Gibson, Appl. Phys. Lett. 57, 153 (1990).
10. L. R. Harriott, J. Vac. Sci. Technol. B 15, 2130 (1997).
11. M. J. Laboda, C. M. Grove, and R. F. Schneider, J. Electrochem. Soc. 145, 2861 (1998).
12. H. Namatsu, Y. Takahashi, K. Yamazake, T. Yamaguchi, M. Nagase, and K. Kurihara, J. Vac. Sci. Technol. B 16, 69 (1998).
13. F. C. M. J. M. van, J. P. Weterings, A. K. yan Langen-Suurling, and J. Romijn, J. Vac. Sci. Technol. B 18, 3419 (2000).
14. D. Thomas, G. Smith, and L. Nguyen, Int. Dielectrics for ULSI Multilevel Interconnection Conference (DUMIC) (1997), p. 361.
15. H. Meynen, R. Uttecht, T. Gao, M. V. Hove, S. Vanhaelemeersch, and K. Maex, in Low and High Dielectric Constant Materials, edited by W. D. Brown, S. S. Ang, M. Loboda, S. Sammak, R. Singh, and H. S. Rathore (The Electrochemical Society Proceedings Series, Pennington, NJ, 1998), PV 98-3, p. 29.
16. P. T. Liu, T. C. Chang, S. M. Sze, F. M. Pan, Y. J. Mei, W. F. Wu, M. S. Tsai, B. T. Dai, C. Y. Chang, F. Y. Shih, and H. D. Hung, Thin Solid Films 332, 345 (1998).
17. E. Kondoh, M. R. Baklanov, H. Bender, and K. Maex, Electrochem. Solid-State Lett. 1, 224 (1998).