Influence of additives on anisotropic grain growth in silicon nitride ceramics

Materials Science and Engineering: A

Volumn 422, Issue 1-2, 2006, Pages 85-91

  Becher, P F ^a   Painter, G S ^a   Shibata, N ^b   Satet, R L ^c   Hoffmann, M J ^c   Pennycook, S J ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF TOKYO   (Japan)

^c UNIVERSITY OF KARLSRUHE   (Germany)

Author keywords

Atomic adsorption; Grain growth; Rare earths; Segregation; Silicon nitride

Indexed keywords

ADDITIVES; ANISOTROPY; COMPOSITION; GRAIN GROWTH; METALLOGRAPHIC MICROSTRUCTURE; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEGREGATION (METALLOGRAPHY); TRANSMISSION ELECTRON MICROSCOPY;

ANISOTROPIC GRAIN GROWTH; ATOMIC ADSORPTION; GRAIN MORPHOLOGY; SCANNING TRANSMISSION ELECTRON MICROSCOPY (STEM);

SILICON NITRIDE;

ADDITIVES; ANISOTROPY; COMPOSITION; GRAIN GROWTH; METALLOGRAPHIC MICROSTRUCTURE; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SEGREGATION (METALLOGRAPHY); SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

EID: 33645898334     PISSN: 09215093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.msea.2006.01.006     Document Type: Article

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