Arrangement of rare-earth elements at prismatic grain boundaries in silicon nitride

Philosophical Magazine Letters

Volumn 84, Issue 12, 2004, Pages 755-762

  Winkelman, G B ^a   Dwyer, C ^a   Hudson, T S ^a   Nguyen Manh, D ^a   Doblinger M ^a   Satet, R L ^b   Hoffmann, M J ^b   Cockayne, D J H ^a  

^a UNIVERSITY OF OXFORD   (United Kingdom)

^b UNIVERSITY OF KARLSRUHE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LOSS SPECTROSCOPY; GRAIN BOUNDARIES; INTERFACES (MATERIALS); LANTHANUM; LUTETIUM; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SILICON NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

HAADF-STEM; HALF-ANGLE ANGULAR DARK-FIELD (HAADF); PRISM PLANES; SCANNING TRANSMISSION ELECTRON MICROSCOPY (STEM); STRUCTURAL ARRANGEMENT;

RARE EARTH ELEMENTS;

EID: 19944380152     PISSN: 09500839     EISSN: None     Source Type: Journal    
DOI: 10.1080/09500830500041302     Document Type: Article

References (12)

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