Transient growth bands in silicon nitride cooled in rare-earth-based glass

Journal of the American Ceramic Society

Volumn 80, Issue 6, 1997, Pages 1397-1404

  Wang, Chong Min ^a,d   Pan, Xiaoqing ^e,h   Gu, Hui ^f,h   Duscher, Gerd ^g,h   Hoffmann, Michael J ^b,h   Cannon, Rowland M ^c,h   Rüble, Manfred ^a,h  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^b UNIVERSITY OF KARLSRUHE   (Germany)

^c LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^e UNIVERSITY OF MICHIGAN   (United States)

^f JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^g OAK RIDGE NATIONAL LABORATORY   (United States)

^h AMERICAN CERAMIC SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING; CRYSTAL LATTICES; ELECTRON ENERGY LOSS SPECTROSCOPY; GLASS; GRAIN BOUNDARIES; GRAIN GROWTH; PARTICLES (PARTICULATE MATTER); RARE EARTH ELEMENTS; SOLID SOLUTIONS; SUPERSATURATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY SPECTROSCOPY;

ENERGY DISPERSIVE X RAY SPECTROSCOPY; RARE EARTH BASED GLASS;

SILICON NITRIDE;

EID: 0031169945     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1997.tb02997.x     Document Type: Article

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