Calculation of grain-boundary bonding in rare-earth-doped β-Si3N4

Journal of the American Ceramic Society

Volumn 81, Issue 3, 1998, Pages 565-570

  Nakayasu, Tetsuo ^a   Yamada, Tetsuo ^a,d   Tanaka, Isao ^b,d   Adachi, Hirohiko ^b   Goto, Seishi ^c,d  

^a UBE INDUSTRIES LTD   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c YAMAGUCHI UNIVERSITY   (Japan)

^d AMERICAN CERAMIC SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COMPOSITION EFFECTS; COMPUTATIONAL METHODS; CRACK PROPAGATION; DOPING (ADDITIVES); GRAIN BOUNDARIES; GRAIN GROWTH; IONS; MATHEMATICAL MODELS; RARE EARTH ELEMENTS; SILICON NITRIDE; SINTERING;

LIQUID PHASE SINTERING; MOLECULAR ORBITALS;

CERAMIC MATERIALS;

EID: 0032028853     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1998.tb02375.x     Document Type: Article

References (13)

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