A simulation study on novel field stop IGBTs using superjunction

IEEE Transactions on Electron Devices

Volumn 53, Issue 4, 2006, Pages 884-890

  Oh, Kwang Hoon ^a   Lee, Jaegil ^a   Lee, Kyu Hyun ^a   Kim, Young Chul ^a   Yun, Chongman ^a  

^a Fairchild Korea Semiconductor Ltd   (South Korea)

Author keywords

Field stop (FS); Insulated gate bipolar transistor (IGBT); Nonpunchthrough (NPT); Superjunction (SJ)

Indexed keywords

COMPUTER SIMULATION; CURRENT DENSITY; ELECTRIC POTENTIAL; NUMERICAL ANALYSIS; PERFORMANCE; SEMICONDUCTOR DEVICE MODELS;

COLLECTOR CURRENT DENSITY; SUPERJUNCTION;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 33645748831     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.870278     Document Type: Article

References (16)

1. Y. Takahashi, K. Yoshikawa, T. Koga, M. Soutome, and Y. Seki, "Experimental investigations of 2.5 kV-100 A PT type and NPT type IGBTs," in Proc. ISPSD, 1995, pp. 70-74.
2. T. Laska, J. Figger, F. Hirler, and F. Scholz, "Optimizing the vertical IGBT structure- the NPT concept as the most economic and electrically ideal solution for a 1200V-IGBT," in Proc. ISPSD, 1996, pp. 169-172.
3. D. Burns, I. Deram, J. Mello, J. Morgan, I. Wan, and F. Robb, "NPT-IGBT-Optimizing for manufacturability," in Proc. ISPSD, 1996, pp. 331-334.
4. T. Laska, M. Münzer, F. Pfirsch, C. Schaeffer, and T. Schmidt, "The field-stop IGBT (FS IGBT) - A new power device concept with a great improvement potential," in Proc. ISPSD, 2000, pp. 355-358.
5. T. Laska, G. Miller, M. Pfaffenlehner, P. Türkes, D. Berger, B. Gutsmann, P. Kanschat, and M. Münzer, "Short circuit properties of trench-/field-stop-IGBTs - Design aspects for a superior robustness," in Proc. ISPSD, 2003, pp. 152-155.
6. M. Pfaffenlehner, J. Biermann, C. Schaeffer, and H. Schulze, "New 3300 V chip generation with a trench IGBT and an optimized field stop concept with a smooth switching behavior," in Proc. ISPSD, 2004, pp. 107-110.
7. K. Oyama, T. Arai, K. Saitou, K. Masuda, and M. Mori, "Advanced HiGT with low-injection punch-through (LiPT) structure," in Proc. ISPSD, 2004, pp. 111-114.
8. K. Nakamura, S. Kusunoki, H. Nakamura, Y. Ishimuro, Y. Tomomatsu, and T. Minato, "Advanced wide cell pitch CSTBTs having light punch-through (LPT) structures," in Proc. ISPSD, 2002, pp. 277-280.
9. T. Fujihira, "Theory of semiconductor superjunction devices," Jpn. J. Appl. Phys., vol. 36, no. 10, pp. 6254-6262, Oct. 1997.
10. L. Lorenz, G. Deboy, A. Knapp, and M. März, "CoolMOS - A new milestone in high voltage power MOS," in Proc. ISPSD, 1999, pp. 3-10.
11. M. Saggio, D. Fagone, and S. Musumeci, "Mdmesh: Innovative technology for high voltage powerMOSFETs," in Proc. ISPSD, 2000, pp. 65-68.
12. R. van Dalen and C. Rochefort, "Electrical characterisation of vertical vapor phase doped (VPD) resurf MOSFETs," in Proc. ISPSD, 2004, pp. 451-454.
13. 2 600 V-class superjunction MOSFET," in Proc. ISPSD, 2004, pp. 459-462.
14. T. Fujihira and Y. Miyasaka, "Simulated superior performances of semiconductor superjunction devices," in Proc. ISPSD, 1998, pp. 423-426.
15. Taurus Workbench Manual, Avant! Corp, Fremont, CA, 2001.
16. P. Shenoy, A. Bhalla, and G. Dolny, "Analysis of the effect of charge imbalance on the static and dynamic characteristics of the super junction MOSFET," in Proc. ISPSD, 1999, pp. 99-102.