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IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn 16, Issue , 2004, Pages 107-110

New 3300V chip generation with a trench IGBT and an optimized field stop concept with a smooth switching behavior

(4) Pfaffenlehner, M a Biermann, J b Schaeffer, C c Schulze, H c

a INFINEON TECHNOLOGIES AG (Germany)

b Eupec GmbH (Germany)

c INFINEON TECHNOLOGIES AUSTRIA AG (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC NETWORK ANALYSIS; ELECTRIC POTENTIAL; INDUCTANCE; INSULATED GATE BIPOLAR TRANSISTORS; OPTIMIZATION; SILICON WAFERS; SWITCHING;

CHIP GENERATION; GATE DRIVERS; SWITCHING BEHAVIOR; TRENCH CELL;

MICROPROCESSOR CHIPS;

EID: 4944245538 PISSN: None EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/wct.2004.239836 Document Type: Conference Paper

Times cited : (23)

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2
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3
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4
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5
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6
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7
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8
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9
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10
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11
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.