Advanced wide cell pitch CSTBTs having Light Punch-Through (LPT) structures

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2002, Pages 277-280

  Nakamura, Katsumi ^a   Kusunoki, Shigeru ^a   Nakamura, Hideki ^a   Ishimura, Youichi ^a   Tomomatsu, Yoshifumi ^a   Minato, Tadaharu ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

CDE; CSTBT; CVD Gate Oxide; LPT; Short Circuit Capability; Trench IGBT; Wide Cell Pitch

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC POTENTIAL; INSULATED GATE BIPOLAR TRANSISTORS; LEAKAGE CURRENTS; SEMICONDUCTOR JUNCTIONS; SHORT CIRCUIT CURRENTS;

GATE OXIDES;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0036048245     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor
2. 600 V trench IGBT in comparison with planar IGBT - An evolution of the limit of IGBT performance
3. Carrier stored trench-gate bipolar transistor (CSTBT) - A novel power device for high voltage application
4. 1200 V-trench-IGBT study with square short circuit SOA
5. The field stop IGBT (FS IGBT) - A new power device concept with a great improvement potential
6. Wide cell pitch 1200 V NPT CSTBTs with short circuit ruggedness
7. A design concept for the low forward voltage drop 4500 V trench IGBT
8. A design concept for the low turn-off loss 4.5 V trench IGBT
9. Evaluation of thick silicon dioxides grown on trench MOS gate structures
10. Advantages of thick CVD gate oxide for trench MOS gate structures