Optimizing the vertical IGBT structure - the NPT concept as the most economic and electrically ideal solution for a 1200 V-IGBT

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1996, Pages 169-172

  Laska, T ^a   Fugger, J ^a   Hirler, F ^a   Scholz, W ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; GATES (TRANSISTOR); MOSFET DEVICES; OPTIMIZATION; SEMICONDUCTOR DEVICE STRUCTURES; SWITCHING CIRCUITS; VOLTAGE MEASUREMENT;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT); SWITCHING LOSSES;

BIPOLAR TRANSISTORS;

EID: 0029714044     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)