Electrical characterisation of vertical Vapor Phase Doped (VPD) RESURF MOSFETs

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn 16, Issue , 2004, Pages 451-454

  Van Dalen, R ^a   Rochefort, C ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONTACTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; OPTIMIZATION; SILICON;

FIGURE-OF-MERITS (FOM); PITCH SIZE; VAPOR PHASE DOPING (VPD);

MOSFET DEVICES;

EID: 4944257338     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/wct.2004.240356     Document Type: Conference Paper

References (12)

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8. R. van Dalen et al., "Vertical multi-RESURF MOSFETs exhibiting record low specific resistance", IEDM, pp.737-740, 2003.
9. Y.Kiyota et al., "Rapid Vapor-Phase Direct Doping; Ultra-shallow junction formation method for high-speed bipolar and highly-integrated DRAM LSIs", Extended Abstracts 1991 Int. Conf. on Solid State Dev. and Mat., pp.47-49, 1991.
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11. See for example T. Fujihira, "Theory of semiconductor superjunction devices", Jpn.J.Appl.Phys. 36, pp.6254-6262, 1997.
12. gd ranging between 350-800mΩ.