Effects of hot-carrier stress on the RF performance of 0.18 μm technology NMOSFETs and circuits

IEEE International Reliability Physics Symposium Proceedings

Volumn 2002-January, Issue , 2002, Pages 98-104

  Naseh, S ^a   Deen, M J ^a   Marinov, O ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

Circuits; Degradation; Hot carrier effects; Hot carriers; MOSFETs; Noise figure; Noise measurement; Radio frequency; Stress; Threshold voltage

Indexed keywords

CAPACITANCE; DEGRADATION; ELECTRIC BREAKDOWN; HETEROJUNCTION BIPOLAR TRANSISTORS; HOT CARRIERS; LOW NOISE AMPLIFIERS; NETWORKS (CIRCUITS); NOISE FIGURE; STRESSES; THRESHOLD VOLTAGE;

GATE SOURCE CAPACITANCE; HOT CARRIER EFFECT; INTRINSIC VOLTAGE GAINS; MINIMUM NOISE FIGURE; MOSFETS; NOISE MEASUREMENTS; RADIO FREQUENCIES; SMALL SIGNAL MODEL;

MOSFET DEVICES;

EID: 84949201780     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2002.996616     Document Type: Conference Paper

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