New mode of hot carrier degradation in 0.18 μm CMOS technologies

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 1998, Pages 176-177

  Liu, C T ^a   Lloyd, E J ^a   Chang, C F ^a   Cheung, K P ^a   Colonell, J I ^a   Lai, W Y C ^a   Liu, R ^a   Pai, C S ^a   Vaidya, H ^a   Clemens, J T ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; ELECTRIC FIELD EFFECTS; ELECTRONS; HOT CARRIERS; INTEGRATED CIRCUIT MANUFACTURE; ION IMPLANTATION; NITROGEN; SEMICONDUCTING SILICON;

HOT ELECTRONS;

CMOS INTEGRATED CIRCUITS;

EID: 0031639821     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)