RF performance degradation in nMOS transistors due to hot carrier effects

IEEE Transactions on Electron Devices

Volumn 47, Issue 5, 2000, Pages 1068-1072

  Park, Jong Tae ^a   Lee, Byung Jin ^a   Kim, Dong Wook ^a   Yu, Chong Gun ^a   Yu, Hyun Kyu ^a,b  

^a SolarLight Ltd   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Cutoff frequency; Hot carrier effects; Maximum frequency; Minimum noise margin; RF performance in nMOS transistors

Indexed keywords

EID: 0000902358     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.841242     Document Type: Article

References (14)

1. H.S. Momose et al., "High frequency AC characteristics of 1.5 nm gate oxide MOSFET," in 1EDM Tech. Dig., 1996, pp. 105-108.
2. S.P. Voinigescu, S.W. Taraswicz, T. MacElwee, and J. Ilowski, "An assessment of the state-of-the-art 0.5 ftm bulk CMOS technology for RF applications," in IEDM Tech. Dig., 1995, pp. 721-724.
3. T. Manku, "Microwave CMOS-devices and circuit," in Proc. IEEE Custom Integrated Circuit Conf., 1998, pp. 59-60.
4. D.K. Shaeffer and T.H. Lee, "A 1.5 V, 1.5 GHz CMOS low noise amplifier," IEEEJ. Solid-State Circuits, vol. 32, pp. 745-759, 1997.
5. J.E. Chung, K.N. Quader, C. G. Sodini, P. K. Ko, and C. Hu, "The effects of hot-electron degradation on analog MOSFET performance," in IEDM Tech. Dig., 1990, pp. 553-557.
6. V.H. Chan and J.E. Chung, "The impact of nMOSFET hot carrier degradation on CMOS analog subcircuits performance," IEEE J. Solid-State Circuits, vol. 30, pp. 644-649, 1995.
7. C.G. Yu, H.J. Kirn, W. D. Jeong, and J. T. Park, "The performance degradation of folded cascode CMOS op-amp due to hot carrier effects," in Proc. Midwest Circuit Symp., 1997, pp. 164-167.
8. B. Subranhmaniam, J.Y. Chen, and A.H. Johnston, "MOSFET degradation due to hot-carrier effect at high frequencies," IEEE Electron Device Lett., vol. 11, pp. 21-23, Jan. 1990.
9. E.S. Snyder, D.V. Campell, S. E. Swanson, and D. G. Pierce, "Novel self-stressing test structures for high frequency reliability characterization," in Proc. 31st Int. Relibility Physics Symp., 1993, pp. 57-65. 10 C. Hu et al., "Hot electron induced MOSFET degradation model, monitor, and improvement," IEEE Trans. Electron Devices, vol. 32, pp. 375-385, Feb. 1985.
10. P. Heremans, R. Bellens, G. Groeseneken, and H.E. Maes, "Consistent model for the hot-carrier degradation in n-and p-channel MOSFET's," IEEE Trans. Electron Devices, vol. 35, pp. 2194-2209, Dec. 1988.
11. T.Y. Chan, C.L. Chiang, and H. Gaw, "New insight into hot electron induced degradation of n-MOSFET's," in IEDM Tech. Dig., 1988, pp. 196-199.
12. S.M.Sze, Physics of Semiconductor Devices. New York: Wiley, 1981, p. 343.
13. C.H. Ling, D.S. Ang, andS. E. Tan, "Effects of measurement frequency and temperature anneal on differential gate capacitance spectra oberved in hot carrier stressed MOSFET's," IEEE Trans. Electron Devices, vol. 42, pp. 1528-1530, Aug. 1995.
14. E. Takeda, A. Shimizu, and T. Hagiwara, "Role of hot-hole injection in hot-carrier effects and the small degraded channel region in MOSFET's," IEEE Electron Device Lett., vol. EDL-4, pp. 329-331, Sept. 1983.