RF noise scaling trend of MOSFETs from 0.5 μm to 0.13 μm technology nodes

IEEE MTT-S International Microwave Symposium Digest

Volumn 1, Issue , 2004, Pages 9-12

  King, M C ^a,b   Yang, M T ^b   Kuo, C W ^b   Chang, Yun ^b   Chin, Albert ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Associated gain; CMOS; Ft; Noise; Scaling trend

Indexed keywords

ASSOCIATE GAIN; NOISE FLOOR; NOISE SCALING; SCALING TREND;

AMPLIFIERS (ELECTRONIC); CAPACITANCE; CHANNEL CAPACITY; CMOS INTEGRATED CIRCUITS; ELECTRIC RESISTANCE; ENERGY UTILIZATION; GAIN CONTROL; SEMICONDUCTOR DEVICE STRUCTURES; SPURIOUS SIGNAL NOISE; VLSI CIRCUITS;

MOSFET DEVICES;

EID: 4444353298     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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