The minimum noise figure and mechanism as scaling RF MOSFETs from 0.18 to 0.13 μn technology nodes

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

Volumn , Issue , 2003, Pages 373-376

  Huang, C H ^a   Chan, K T ^a   Chen, C Y ^a   Chin, Albert ^a   Huang, G W ^b   Tseng, C ^c   Liang, V ^c   Chen, J K ^c   Chien, S C ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^c United Microelectronics Cooperation   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; GATES (TRANSISTOR); SCATTERING PARAMETERS; THERMAL NOISE;

SIGNAL LOSS;

MOSFET DEVICES;

EID: 0043091911     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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