Effects of remote plasma pre-oxidation of Si substrates on the characteristics of ALD-deposited HfO2 gate dielectrics

Electrochemical and Solid-State Letters

Volumn 9, Issue 6, 2006, Pages

  Kang, Hyunseok ^a   Kim, Seokhoon ^a   Choi, Jihoon ^a   Kim, Jinwoo ^a   Jeon, Hyeongtag ^a   Bae, Choelhwyi ^b  

^a Hanyang University   (South Korea)

^b SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRIC PROPERTIES; HAFNIUM COMPOUNDS; HYSTERESIS; SILICA; SUBSTRATES;

ATOMIC LAYER DEPOSITION; EQUIVALENT OXIDE THICKNESS (EOT); REMOTE PLASMA OXIDATION; REMOTE PLASMA PREOXIDATION;

DIELECTRIC DEVICES;

EID: 33645701747     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2192647     Document Type: Article

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