SCOPUS 정보 검색 플랫폼

Volumn 45, Issue 4 A, 2006, Pages 2531-2533

Investigation of surface pits originating in dislocations in AlGaN/GaN epitaxial layer grown on Si substrate with buffer layer

Author keywords

Atomic force microscope; GaN; Plan view TEM; Si substrate; Surface pits

Indexed keywords

ATOMIC FORCE MICROSCOPY; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; GALLIUM NITRIDE; SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

EDGE DISLOCATIONS; NETWORK STRUCTURE; SURFACE PITS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33645676372 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.2531 Document Type: Article

Times cited : (7)

References (12)

1
- 0000070228
- H. Ishikawa, G. Y. Zhao, N. Nakada, T. Egawa, T. Jimbo and M. Umeno: Jpn. J. Appl. Phys. 38 (1999) L492.
- (1999) Jpn. J. Appl. Phys. , vol.38
- Ishikawa, H.¹ Zhao, G.Y.² Nakada, N.³ Egawa, T.⁴ Jimbo, T.⁵ Umeno, M.⁶

2
- 0343807452
- A. Dadgar, J. Bläsing, A. Diez, A. Alam, M. Heuken and A. Krost: Jpn. J. Appl. Phys. 39 (2000) L1183.
- (2000) Jpn. J. Appl. Phys. , vol.39
- Dadgar, A.¹ Bläsing, J.² Diez, A.³ Alam, A.⁴ Heuken, M.⁵ Krost, A.⁶

3
- 0035851454
- E. Feltin, B. Beaumont, M. Laügt, P. de Mierry, P. Vennéguès, H. Lahrèche, M. Leroux and P. Gibart: Appl. Phys. Lett. 79 (2001) 3230.
- (2001) Appl. Phys. Lett. , vol.79 , pp. 3230
- Feltin, E.¹ Beaumont, B.² Laügt, M.³ De Mierry, P.⁴ Vennéguès, P.⁵ Lahrèche, H.⁶ Leroux, M.⁷ Gibart, P.⁸

4
- 13744263753
- T. Sugahara, J.-S. Lee and K. Ohtsuka: Jpn. J. Appl. Phys. 43 (2004) L1595.
- (2004) Jpn. J. Appl. Phys. , vol.43
- Sugahara, T.¹ Lee, J.-S.² Ohtsuka, K.³

5
- 15344344224
- G. Cong, Y. Lu, W. Peng, X. Liu, X. Wang and Z. Wang: J. Cryst. Growth 276 (2005) 381.
- (2005) J. Cryst. Growth , vol.276 , pp. 381
- Cong, G.¹ Lu, Y.² Peng, W.³ Liu, X.⁴ Wang, X.⁵ Wang, Z.⁶

6
- 0032069766
- P. J. Hansen, Y. E. Strausser, A. N. Erickson, E. J. Tarsa, P. Kozodoy, E. G. Brazel, J. P. Ibbetson, U. Mishra, V. Narayanamutti, S. P. DenBaars and J. S. Speck: Appl. Phys. Lett. 72 (1998) 2247.
- (1998) Appl. Phys. Lett. , vol.72 , pp. 2247
- Hansen, P.J.¹ Strausser, Y.E.² Erickson, A.N.³ Tarsa, E.J.⁴ Kozodoy, P.⁵ Brazel, E.G.⁶ Ibbetson, J.P.⁷ Mishra, U.⁸ Narayanamutti, V.⁹ Denbaars, S.P.¹⁰ Speck, J.S.¹¹

7
- 0001206935
- B. Heying, E. J. Tarsa, C. R. Elsass, P. Fini, S. P. DenBaars and J. S. Speck: J. Appl. Phys. 85 (1999) 6470.
- (1999) J. Appl. Phys. , vol.85 , pp. 6470
- Heying, B.¹ Tarsa, E.J.² Elsass, C.R.³ Fini, P.⁴ Denbaars, S.P.⁵ Speck, J.S.⁶

8
- 0000198240
- C. Youtsey, L. T. Romano, R. J. Molnar and T. Adesida: Appl. Phys. Lett. 74 (1999) 3537.
- (1999) Appl. Phys. Lett. , vol.74 , pp. 3537
- Youtsey, C.¹ Romano, L.T.² Molnar, R.J.³ Adesida, T.⁴

9
- 0000392520
- X. H. Wu, L. M. Brown, D. Kapolnek, S. Keller, S. P. DenBaars and J. S. Speck; J. Appl. Phys. 80 (1996) 3228.
- (1996) J. Appl. Phys. , vol.80 , pp. 3228
- Wu, X.H.¹ Brown, L.M.² Kapolnek, D.³ Keller, S.⁴ Denbaars, S.P.⁵ Speck, J.S.⁶

10
- 0032094525
- X. H. Wu, P. Fini, E. J. Tarsa, B. Heying, S. Keller, U. K. Mishra, S. P. DenBarrs and J. S. Speck: J. Cryst. Growth 189-190 (1998) 231.
- (1998) J. Cryst. Growth , vol.189-190 , pp. 231
- Wu, X.H.¹ Fini, P.² Tarsa, E.J.³ Heying, B.⁴ Keller, S.⁵ Mishra, U.K.⁶ Denbarrs, S.P.⁷ Speck, J.S.⁸

11
- 36448998638
- W. Qian, M. Skowronski, M. De Graef, K. Doverspike, L. B. Rowland and D. K. Gaskill: Appl. Phys. Lett. 66 (1995) 1252.
- (1995) Appl. Phys. Lett. , vol.66 , pp. 1252
- Qian, W.¹ Skowronski, M.² De Graef, M.³ Doverspike, K.⁴ Rowland, L.B.⁵ Gaskill, D.K.⁶

12
- 0032023301
- M. Hao, T. Sugihara, H. Sato, Y. Morishima, Y. Naoi, L. T. Romano and S. Sakai: Jpn. J. Appl. Phys. 37 (1998) L291.
- (1998) Jpn. J. Appl. Phys. , vol.37
- Hao, M.¹ Sugihara, T.² Sato, H.³ Morishima, Y.⁴ Naoi, Y.⁵ Romano, L.T.⁶ Sakai, S.⁷

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.