Effects of annealing on oxygen depth profiles and chemical etching rates of thermally grown silicon oxides

Journal of the Electrochemical Society

Volumn 145, Issue 4, 1998, Pages 1306-1309

  Watanabe, Yoshio ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPACTION; DENSITY (SPECIFIC GRAVITY); ETCHING; GROWTH (MATERIALS); INTERFACES (MATERIALS); OXYGEN;

OXYGEN DEPTH PROFILE; THERMAL GROWTH;

SILICA;

EID: 0032047446     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1838456     Document Type: Article

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