Dopant profile engineering by near-infrared femtosecond laser activation

Applied Physics Letters

Volumn 88, Issue 13, 2006, Pages

  Wang, Yi Chao ^a   Pan, Ci Ling ^a   Shieh, Jia Min ^b   Dai, Bau Tong ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; DIFFUSION; DOPING (ADDITIVES); INFRARED RADIATION; PHOSPHORUS; SILICON; SUBSTRATES; THERMAL EFFECTS;

DOPANT DIFFUSIONS; FEMTOSECOND LASER ANNEALING (FLA); INTERSTITIAL GRADIENTS; PREAMORPHIZING IMPLANTATION;

LASER APPLICATIONS;

EID: 33645506103     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2191095     Document Type: Article

References (15)

1. A. Agarwal, H. J. Gossmann, D. J. Eaglesham, S. B. Herner, A. T. Fiory, and T. E. Haynes, Appl. Phys. Lett. 74, 2435 (1999).
2. A. Agarwal, H. J. Gossmann, D. J. Eaglesham, L. Pelaz, D. C. Jacobson, T. E. Haynes, and Y. Erokhin, Appl. Phys. Lett. 71, 3141 (1997).
3. R. Duffy, V. C. Venezia, A. Heringa, T. W. T. Husken, M. J. P. Hopstaken, N. E. B. Cowern, P. B. Griffin, and C. C. Wang, Appl. Phys. Lett. 82, 3647 (2003).
4. Y. F. Chong, K. L. Pey, A. T. S. Wee, A. See, L. Chan, Y. F. Lu, W. D. Song, and L. H. Chua, Appl. Phys. Lett. 76, 3197 (2000).
5. C. H. Poon, B. J. Cho, Y. F. Lu, M. Bhat, and Alex See, J. Vac. Sci. Technol. B 21, 706 (2003).
6. C. H. Poon, L. S. Tan, B. J. Cho, A. See, and M. Bhat, J. Electrochem. Soc. 151, G80 (2004).
7. H. C. H. Wang, C. C. Wang, C. S. Chang, T. Wang, P. B. Griffin, and C. H. Diaz, IEEE Electron Device Lett. 22, 65 (2001).
8. V. Privitera, C. Spinella, G. Fortunato, and L. Mariucci, Appl. Phys. Lett. 77, 552 (2000).
9. S. Whelan, A. L. Magna, V. Privitera, G. Mannino, M. Italia, C. Bongiorno, G. Fortunato, and L. Mariucci, Phys. Rev. B 67, 075201 (2003).
10. L. Shao, X. Wang, I. Rusakova, H. Chen, J. Liu, J. Bennett, L. Larson, J. Jin, P. A. W. van der Heide, and W. K. Chu, J. Appl. Phys. 92, 5788 (2002).
11. J. M. Shieh, Z. H. Chen, B. T. Dai, Y. C. Wang, A. Zaitsev, and C. L. Pan, Appl. Phys. Lett. 85, 1232 (2004).
12. S. K. Sundaram and E. Mazur, Nat. Mater. 1, 217 (2002).
13. A. Rousse, C. Rischel, S. Fourmaux, I. Uschmann, S. Sebban, G. Grillon, Ph. Balcou, E. Förster, J. P. Geindre, P. Audebert, J. C. Gauthier, and D. Hulin, Nature (London) 410, 65 (2001).
14. R. Duffy, V. C. Venezia, J. Loo, M. J. P. Hopstaken, M. A. Verheijen, G. C. J. Maas, Y. Tamminga, T. Dao, and C. Demeurisse, Appl. Phys. Lett. 86, 81917 (2005).
15. J. Xu, V. Krishnamoorthy, K. S. Jones, and M. E. Law, J. Appl. Phys. 81, 107 (1997).