A comparison of boron and phosphorus diffusion and dislocation loop growth from silicon implants into silicon

Journal of Applied Physics

Volumn 81, Issue 1, 1997, Pages 107-111

  Xu, Jingwei ^a   Krishnamoorthy, V ^b   Jones, Kevin S ^b   Law, Mark E ^b  

^a TEXAS INSTRUMENTS   (United States)

^b University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0347133653     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363994     Document Type: Review

References (7)

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