Energy spectra of electrons backscattered from sample surfaces with heterostructures using field-emission scanning tunneling microscopy

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 3 B, 2006, Pages 2278-2282

  Hirade, Masato ^a   Arai, Toyoko ^a,b   Tomitori, Masahiko ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Al on Si(111); Auger electron spectroscopy; Electron energy loss; Field emission; Scanning tunneling microscopy

Indexed keywords

ALUMINUM; AUGER ELECTRON SPECTROSCOPY; BACKSCATTERING; ELECTRON ENERGY LEVELS; FIELD EFFECT SEMICONDUCTOR DEVICES; HETEROJUNCTIONS; OPTIMIZATION; SCANNING TUNNELING MICROSCOPY; SILICON; SPECTRUM ANALYSIS;

AL ON SI(111); ELECTRON ENERGY LOSS; FIELD EMISSIONS; GRAZING ANGLE;

ELECTRONS;

EID: 33645502181     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.2278     Document Type: Article

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