Energy spectrum of backscattered electrons excited by a field emission scanning tunneling microscope with a build-up [111]-oriented W tip

Applied Surface Science

Volumn 144-145, Issue , 1999, Pages 123-127

  Tomitori, Masahiko ^a   Terai, Hitoshi ^a   Arai, Toyoko ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Auger electron spectroscopy; Build up tip; Electron energy loss spectroscopy; Field emission microscopy; Scanning tunneling microscopy; Silicon

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; ELECTRON BEAMS; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; EMISSION SPECTROSCOPY; SEMICONDUCTING SILICON; SPECTRUM ANALYSIS;

ELASTIC BACKSCATTERING PEAK; FIELD EMISSION MICROSCOPY;

SCANNING TUNNELING MICROSCOPY;

EID: 0032675556     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00783-1     Document Type: Article

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