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Applied Surface Science

Volumn 194, Issue 1-4, 2002, Pages 131-135

Vacancy-type defects in 6H-SiC caused by N + and Al + high fluence co-implantation

(3) Anwand, W a Brauer, G a Skorupa, W a

a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH (Germany)

Author keywords

6H SiC; N + and Al + co implantation; Slow positron implantation spectroscopy; Vacancy type defects

Indexed keywords

DEFECTS; DOPPLER EFFECT; ION IMPLANTATION; POSITRON ANNIHILATION SPECTROSCOPY; SUBSTRATES; SURFACE STRUCTURE; THERMAL EFFECTS; TRANSPORT PROPERTIES;

SLOW POSITRON IMPLANTATION SPECTROSCOPY;

SILICON CARBIDE;

EID: 0037150612 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(02)00112-5 Document Type: Conference Paper

Times cited : (17)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.