Prospects for large single crystal CVD diamond

Industrial Diamond Review

Volumn 66, Issue 1, 2006, Pages 28-32

  Ho, S S ^a   Yan, C S ^a   Liu, Z ^a   Mao, H K ^a   Hemley, R J ^a  

^a GEOPHYSICAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; FRACTURE TOUGHNESS; GROWTH (MATERIALS); HIGH PRESSURE EFFECTS; HIGH TEMPERATURE EFFECTS; MECHANICAL PROPERTIES; OPTICAL PROPERTIES; OPTIMIZATION; SINGLE CRYSTALS;

HIGH-PRESSURE ANNEALING; HIGH-TEMPERATURE ANNEALING; LARGE SINGLE CRYSTAL DIAMOND;

DIAMONDS;

EID: 33645099134     PISSN: 00198145     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (25)

1. B. V. Spitsyn, L. L. Bouilov and B. V. Derjaguin, Vapour growth of diamond on diamond and other surfaces, Journal of Crystal Growth 52 (1981) pp 219-226.
2. M. Kamo, Y. Sato, S. Matsumoto and N. Setaka, Diamond synthesis from gas phase in microwave plasma, Journal of Crystal Growth 62 (1983) pp 642-644.
3. C. S. Yan, Y. K. Vohra, H. K. Mao and R. J. Hemley, Very high growth rate chemical vapour deposition of single-crystal diamond, Proceedings of the National Academy of Sciences 99 (2002) pp 1253-12525.
4. C. S. Yan, H. K. Mao, W. Li, J. Qian, Y. Zhao and R. J. Hemley, Ultrahard diamond single crystals from chemical vapour deposition, Physica Status Solidi (a) 201 (2004) R24-R-27.
5. R. J. Hemley, Y. C. Chen and Y. C. Yan, Growing diamond crystals by chemical vapour deposition, Elements 1 (2005) pp 105-108.
6. J. Isberg, J. Hammersberg, E. Johansson, T. Wikstrom, D. J. Twitchen, A. J. Whitehead, S. E. Coe and G. A. Scarsbrook, High carrier mobility in single-crystal plasma-deposited diamond, Science 297 (2002) pp 1670-1672.
7. A. Chayahara, Y. Mokuno, Y. Horino, Y. Takasu, H. Kato, H. Yoshikawa, N. Fujimori, The effect of nitrogen addition during high-rate homoepitaxial growth of diamond by microwave plasma CVD, Diamond and Related Materials 13 (2004), pp 1954-1958.
8. W. Wang, T. Moses, R. C. Linares, J. E. Shigley, M. Hall and J. E. Bulter, Gem-quality synthetic diamonds grown by a chemical vapour deposition (CVD) method, Gems & Gemology 39 (2003) pp 268-283.
9. P. M. Martineau, S. C. Lawson, A. J. Taylor, S. J. Quinn, D. J. F. Evans and M. J. Crowder, Identification of synthetic diamond grown using chemical vapour deposition (CVD), Gems & Gemology 60 (2004) pp 2-25.
10. S. Woddring and B. Deljanin, EGA USA Booklet (2004).
11. H. Kitawaki, A. Abduriyim and M. Okano, Identification of CVD Synthetic Diamond, Research Laboratory Report at Gemmological Association of all Japan (2005).
12. S. J. Charles, J. E. Butler, B. N. Feygelson, M. F. Newton, D. L. Carroll, J. W. Steeds, H. Darwish, H. K. Mao, C. S. Yan and R. J. Hemley, Characterisation of nitrogen doped chemical vapour deposited single crystal diamond before and after high pressure, high temperature annealing, Physica Status Solidi (a) 201 (2004) pp 2473-2485.
13. R. J. Hemley and H. K. Mao, New windows on earth and planetary interiors, Mineralogical Magazine 66 (2002) pp 791-811.
14. C. S. Yan and Y. K. Vohra, Multiple twinning and nitrogen defect center in chemical vapour deposited homoepitaxial diamond, Diamond and Related Materials 8 (1999) pp 2022-2031.
15. G. Z. Cao, J. J. Schermer, W. J. P. v. Enckevort, W. A. L. M. Elst and L. J. Giling, Growth of {100} textured diamond films by the addition of nitrogen, Journal of Applied Physics 79 (1996) pp 1357-1364.
16. S. Jin and T. D. Moustakas, Effect of nitrogen on the growth of diamond films, Applied Physics Letters 65 (1994) pp 403-405.
17. W. Muller-Sebert, E. Worner, F. Fuchs, C. Wild and P. Koidl, Nitrogen induced increase of growth rate in chemical vapour deposition of diamond, Applied Physics Letters 68 (1996) pp 759-760.
18. A. Afzal, C. A. Rego, W. Ahmed and R. I. Cherry, Hfcvd diamond grown with added nitrogen: Film characterisation and gas-phase composition studies, Diamond and Related Materials 7 (1998) pp 1033-1038.
19. W. L. Mao, H. K. Mao, C. S. Yan, J. Shu, J. Hu and R. J. Hemley, Generation of ultrahigh pressure using single-crystal chemical-vapour-deposition diamond anvils, Applied Physics Letters 83 (2003) pp 5190-5192.
20. Y. Liou, A. Inspektor, R. Weimer, D. Knight and R. Messier, The effect of oxygen in diamond deposition by microwave plasma enhanced chemical vapour deposition, Journal of Materials Research 5 (1990) pp 2305-2312.
21. I. Sakaguchi, M. Nishitani-Gamo, K. P. Loh, S. Hishita, H. Haneda and T. Ando, Suppression of surface cracks on (111) homoepitaxial diamond through impurity elimination by oxygen addition, Applied Physics Letters 73 (1998) pp 2675-2677.
22. S. J. Harris and A. M. Weiner, Effects of oxygen on diamond growth, Applied Physics Letters 55 (1989) pp 2179-2181.
23. A. Tallaire, J. Achard, F. Silva, R. S. Sussmann, A. Gicquel and E. Rzepka, Oxygen plasma pre-treatments for high quality homoepitaxial CVD diamond deposition, Phys. Stat. Sol. (a) (2004) pp 2419-2424.
24. A. M. Zaitsev, Optical Properties of Diamond (2001) Springer-Verlag, Berlin
25. F. Fuchs, C. Wild, K. Schwarz, W. Muller-Sebert and P. Koidl, Hydrogen induced vibrational and electronic transitions in chemical vapour deposited diamond, identified by isotopic substitution, Applied Physics Letters 66 (1995), no. 2, pp177-179.