Recent emission channeling studies in wide band gap semiconductors

Hyperfine Interactions

Volumn 159, Issue 1-4, 2004, Pages 363-372

  Wahl, U ^a,b   Correia, J G ^a,b,c   Rita, E ^a,b   Alves, E ^a,b   Soares, J C ^b   De Vries, B ^d   Matias, V ^d   Vantomme, A ^d  

^a INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA   (Portugal)

^c CERN   (Switzerland)

^d KU LEUVEN   (Belgium)

Author keywords

Fe doping; Implantation; Lattice location; Rare earths; Semiconductors

Indexed keywords

EID: 33645027289     PISSN: 03043843     EISSN: None     Source Type: Journal    
DOI: 10.1007/s10751-005-9125-0     Document Type: Article

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