Lattice location studies of rare earth impurities in 3C-, 4H- and 6H-SiC

Diamond and Related Materials

Volumn 12, Issue 10-11, 2003, Pages 1883-1886

  Vetter, U ^a   Hofsass H ^a   Wahl, U ^b   Dietrich, M ^c  

^a II Physikalisches Jnstitut   (Germany)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^c CERN   (Switzerland)

Author keywords

3C SiC; 4H SiC; 6H SiC; Emission channeling; Implantation; Rare earths; Silicon carbide; Thulium; Ytterbium

Indexed keywords

ANNEALING; ELECTRONS; IMPURITIES; IONS; RADIOACTIVE ELEMENTS;

EMISSION CHANNELLING;

RARE EARTH ELEMENTS;

RARE EARTH METAL;

EID: 0346749379     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2003.08.005     Document Type: Article

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