Local environment of erbium atoms in amorphous hydrogenated silicon

Applied Physics Letters

Volumn 72, Issue 6, 1998, Pages 728-730

  Masterov, V F ^a   Nasredinov, F S ^a   Seregin, P P ^a   Kudoyarova, V Kh ^b   Kuznetsov, A N ^b   Terukov, E I ^b  

^a PETER THE GREAT ST PETERSBURG POLYTECHNIC UNIVERSITY   (Russian Federation)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000962306     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120866     Document Type: Article

References (6)

1. Rare-Earth Doped Semiconductors, edited by, G. S. Pomrenke, P. B. Klein, and D. W. Langer, Mater. Res. Soc. Symp. Proc. (MRS, Pittsburgh, PA, 1993), Vol. 301.
2. A. Polman, G. N. van den Hoven, J. S. Custer, R. Serna, and P. F. A. Alkemade, J. Appl. Phys. 77, 1256 (1995).
3. D. L. Adler, D. C. Jacobson, D. J. Eaglesham, M. A. Marcus, J. L. Benton, J. M. Poate, and P. H. Citrin, Appl. Phys. Lett. 61, 2181 (1992).
4. V. F. Masterov and L. G. Gerchikov, Mater. Res. Soc. Symp. Proc. 422, 227 (1996).
5. M. C. Bresler, O. B. Gusev, V. Kh. Kudoyarova, A. N. Kuznetsov, P. E. Pak, E. I. Terukov, I. N. Yassievich, and B. P. Zakharchenya, Appl. Phys. Lett. 67, 3599 (1995).
6. R. G. Barnes, R. L. Mössbauer, and E. Kankeleit, Phys. Rev. 136A, 175 (1964).