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Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 175-177, Issue , 2001, Pages 241-245

Study of Fe+ implanted GaN

(5) Alves, E a,b Liu, C a,b Waerenborgh, J C a Da Silva, M F a,b Soares, J C a,b

a INSTITUTO TECNOLÓGICO E NUCLEAR (Portugal)

b CENTRO DE FÍSICA NUCLEAR DA UNIVERSIDADE DE LISBOA (Portugal)

Author keywords

GaN; Ion implantation; Lattice site location; M ssbauer effect

Indexed keywords

ANNEALING; CRYSTAL LATTICES; GALLIUM NITRIDE; ION IMPLANTATION; IRON; MOSSBAUER SPECTROSCOPY; SINGLE CRYSTALS;

X RAY EMISSION;

SEMICONDUCTING FILMS;

EID: 0035302217 PISSN: 0168583X EISSN: None Source Type: Journal
DOI: 10.1016/S0168-583X(00)00595-4 Document Type: Conference Paper

Times cited : (8)

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