Lattice location of implanted 147Nd and 147* Pm in GaN using emission channeling

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 453-456

  De Vries, B ^a   Wahl, U ^b   Vantomme, A ^a   Correia, J G ^b,c  

^a KU LEUVEN   (Belgium)

^b Instituto Tecnoló Gico e Nuclear   (Portugal)

^c CERN   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; III-V SEMICONDUCTORS; NITRIDES; OPTICAL SENSORS; RADIOACTIVITY; WIDE BAND GAP SEMICONDUCTORS;

ANGULAR EMISSION; CONVERSION ELECTRONS; EMISSION CHANNELING; EMISSION PATTERN; LATTICE LOCATIONS; POSITION-SENSITIVE DETECTORS; SINGLE-CRYSTALLINE; TEMPERATURE IMPLANTATION;

NEODYMIUM COMPOUNDS;

EID: 84875098594     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390086     Document Type: Conference Paper

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