Influence of O and C co-implantation on the lattice site of Er in GaN

Applied Physics Letters

Volumn 84, Issue 21, 2004, Pages 4304-4306

  De Vries, B ^a   Matias, V ^a   Vantomme, A ^a   Wahl, U ^b   Rita, E M C ^b   Alves, E ^b   Lopes, A M L ^c   Correia, J G ^d  

^a KU LEUVEN   (Belgium)

^b INSTITUTO TECNOLÓGICO E NUCLEAR   (Portugal)

^c UNIVERSITY OF AVEIRO   (Portugal)

^d CERN   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; CHEMICAL BONDS; CRYSTAL DEFECTS; CRYSTAL LATTICES; DOPING (ADDITIVES); ERROR ANALYSIS; GALLIUM NITRIDE; ISOMERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OXYGEN; PHOTOLUMINESCENCE; PROBABILITY DISTRIBUTIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THERMAL EFFECTS;

EMISSION CHANNELING TECHNIQUES; LUMINESCENCE INTENSITIES; ROOT-MEAN-SQUARE (RMS) DISPLACEMENTS; THERMAL VIBRATIONS;

ERBIUM;

EID: 2942692072     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1756196     Document Type: Article

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