1.3 μm GaInNAs bandgap difference confinement semiconductor optical amplifiers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 3 A, 2006, Pages 1635-1639

  Hashimoto, Jun Ichi ^a,b   Koyama, Kenji ^a,b   Katsuyama, Tsukuru ^a,b   Tsuji, Yukihiro ^b   Fujii, Kousuke ^b   Yamazaki, Koichiro ^b   Ishida, Akira ^a,b  

^a Optoelectronic Industry and Technology Development Association (OITDA)   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

Bandgap; Bandgap difference confinement; Built in potential; GaInNAs; Semiconductor optical amplifier; SOA

Indexed keywords

CLADDING (COATING); ELECTRIC CURRENTS; SEMICONDUCTING GALLIUM COMPOUNDS;

BANDGAP; BANDGAP DIFFERENCE CONFINEMENT; BUILT-IN POTENTIAL; GAINNAS; SEMICONDUCTOR OPTICAL AMPLIFIERS; SOA;

LIGHT AMPLIFIERS;

EID: 33644912924     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.1635     Document Type: Article

References (17)

1. M. Kondow, S. Nakatsuka, T. Kitatani, Y. Yazawa and M. Okai: Jpn. J. Appl. Phys. 35 (1996) 5711.
2. S. Sato and S. Satoh: IEEE Photonics Technol. Lett. 11 (1999) 1560.
3. S. Illek, A. Ultsch, B. Borchert, A. Y. Egorov and H. Riechert: Electron. Lett. 36 (2000) 725.
4. M. Kawaguchi, T. Miyamoto, E. Couardes, D. Schlenker, T. Kondo, F. Koyama and K. Iga: Jpn. J. Appl. Phys. 40 (2001) L744.
5. H. Shimizu, K. Kumada, S. Uchiyama and A. Kasukawa; IEEE J. Sel. Top. Quantum Electron. 7 (2001) 355.
6. F. Hohnsdorf, J. Koch, S. Leu, W. Stolz, B. Borchert and M. Druminski; Electron. Lett. 35 (1999) 571.
7. M. Fischer, M. Reinhardt and A. Forchel: Electron. Lett. 36 (2000) 1208.
8. T. Katsuyama, T. Yamada, Y. Iguchi, S. Takagishi, M. Murata, J. Hashimoto and A. Ishida: Conf. Dig. IEEE 18th Int. Semiconductor Laser Conf., Garmish, Germany, 2002, p. 35.
9. T. Ishizuka, Y. Iguchi, T. Yamada, T. Katsuyama, S. Takagishi, M. Murata, J. Hashimoto and A. Ishida: Proc. Indium Phosphide and Related Materials, Santa Barbara, U.S.A., 2003, p. 273.
10. R. Fehse, S. J. Sweeney, A. R. Adams, E. P. O'Reilly, A. Y. Egorov, H. Riechert and S. Illek: Electron. Lett. 37 (2001) 92.
11. Z. Pan, L. H. Li, Y. W. Lin, B. Q. Sun, D. S. Jiang and W. K. Ge: Appl. Phys. Lett. 78 (2001) 2217.
12. J. Hashimoto, K. Koyama, T. Katsuyama, Y. Iguchi, T. Yamada, S. Takagishi, M. Ito and A. Ishida: Tech. Dig. Optical Amplifiers and Their Applications, Otaru, Japan, 2003, p. 235.
13. J. Hashimoto, K. Koyama, T. Katsuyama, Y. Iguchi, T. Yamada, S. Takagishi, M. Ito and A. Ishida: Jpn. J. Appl. Phys. 43 (2004) 3419.
14. J. Hashimoto, K. Koyama, T. Katsuyama, Y. Iguchi, T. Yamada, S. Takagishi, M. Ito and A. Ishida: Tech. Dig. Optical Amplifiers and Their Applications, San Francisco, U.S.A., 2004, Paper OMB4.
15. J. Hashimoto, K. Koyama, T. Katsuyama, Y. Iguchi, T. Yamada, S. Takagishi, M. Ito and A. Ishida: Tech. Dig. 9th Optoelectronics and Communications Conf., Yokohama, Japan, 2004, p. 82.
16. T. Katsuyama, J. Hashimoto. T. Saito, T. Yamada, T. Ishizuka, Y. Tsuji, K. Koyama, Y. IguchiI, K. Fujii, S. Takagishi and A. Ishida: Conf. Dig. 19th Int. Semiconductor Laser Conf., Matsue, Japan, 2004, p. 99.
17. J. Hashimoto, K. Koyama, T. Katsuyama, Y. Tsuji, K. Fujii, K. Yamazaki and A. Ishida: Tech. Dig. Conf. Lasers and Electro-Optics. Baltimore, U.S.A., 2005, paper CMF4.