MOVPE growth of 1.3μm GaInNAs/GaAs quantum well lasers with high performance

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 273-276

  Ishizuka, T ^a   Iguchi, Y ^a   Yamada, T ^a   Katsuyama, T ^a   Takagishi, S ^a   Murata, M ^a   Hashimoto, J ^a   Ishida, A ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; DEGRADATION; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GALLIUM ARSENIDE; GALLIUM NITRIDE; GROWTH (MATERIALS); INDIUM; INDIUM PHOSPHIDE; OPTICAL MATERIALS; OPTICAL PROPERTIES; ORGANOMETALLICS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE DISTRIBUTION;

GALLIUM INDIUM NITROGEN ARSENIDE; QUANTUM WELL STRUCTURES; THRESHOLD CURRENT;

QUANTUM WELL LASERS;

ANNEALING CONDITION; GAINNAS; GAINNAS LASERS; MOVPE GROWTH; QUANTUM WELL STRUCTURES; RESEARCH AND DEVELOPMENT; TEMPERATURE DEPENDENCE;

EID: 0037810846     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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