Properties of nitrogen doped tetrahedral amorphous carbon films prepared by filtered cathodic vacuum arc technique

Journal of Non-Crystalline Solids

Volumn 242, Issue 1, 1998, Pages 40-48

  Cheah, L K ^a   Shi, X ^a   Shi, J R ^a   Liu, E J ^a   Silva, S R P ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DEPOSITION; DOPING (ADDITIVES); ELECTRONIC PROPERTIES; FERMI LEVEL; FILM PREPARATION; MECHANICAL PROPERTIES; MORPHOLOGY; NITROGEN; OPTICAL PROPERTIES; REFRACTIVE INDEX; RUTHERFORD BACKSCATTERING SPECTROSCOPY;

CONDUCTION BAND; FILTERED CATHODIC VACUUM ARC TECHNIQUE; OPTICAL BAND GAP; TETRAHEDRAL AMORPHOUS CARBON FILMS;

AMORPHOUS FILMS;

EID: 0032300873     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00787-X     Document Type: Article

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