Substrate temperature dependence of the surface reaction mechanism of methane plasma chemical vapor depositon: Experimental and ab initio molecular orbital study

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 5 A, 2000, Pages 2843-2846

  Sato, Kota ^a   Cheng, Shih Hung ^a   Haruta, Hitoshi ^a   Yokoyama, Takashi ^a   Kumashiro, Yukinobu ^a  

^a YOKOHAMA NATIONAL UNIVERSITY   (Japan)

Author keywords

a C:H; Ab initio molecular orbital method; IR spectroscopy; Plasma CVD; Raman spectroscopy; Reaction mechanism; sp2 sp3; Substrate temperature

Indexed keywords

COMPUTATIONAL METHODS; HYDROGEN; INFRARED SPECTROSCOPY; METHANE; MOLECULAR STRUCTURE; PLASMA APPLICATIONS; RAMAN SPECTROSCOPY; REACTION KINETICS; THERMAL EFFECTS; THERMODYNAMICS;

MOLECULAR ORBITALS; PLASMA CHEMICAL VAPOR DEPOSITION;

CHEMICAL VAPOR DEPOSITION;

EID: 0033717277     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.2843     Document Type: Article

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