A short synopsis of the current status of porous SiC and GaN

Materials Science Forum

Volumn 483-485, Issue , 2005, Pages 251-256

  Shishkin, Y ^a   Ke, Y ^a   Devaty, R P ^a   Choyke, W J ^a  

^a UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

Anodization; Applications; History; Morphology; Porous

Indexed keywords

ANODIC OXIDATION; GALLIUM NITRIDE; POROUS MATERIALS; SCANNING ELECTRON MICROSCOPY;

ANODIZATION; HISTORICAL DEVELOPMENT; POROUS MORPHOLOGIES;

SILICON CARBIDE;

EID: 31144476339     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-963-6.251     Document Type: Conference Paper

References (20)

1. A. Uhlir, Jr.: Bell Syst. Tech. J. 35 (1956), p, 333.
2. D.R. Turner: J. Electrochem. Soc. 105 (1958), p. 402.
3. J.W. Faust, Jr.: The Etching of Silicon Carbide (Pergamon, Oxford, 1960), p. 403.
4. Y. Watanabe, Y. Arita, T. Yokoyama and Y. Igarashi: J. Electrochem. Soc. 122 (1975), p. 1351.
5. L.T. Canhan: Appl. Phys. Lett. 57 (1990), p. 1046.
6. J.S. Shor and R.M. Osgood, Jr.: J. Electrochem. Soc. 140 (1993), L123.
7. J.S. Shor, I. Grimberg, B-Z. Weiss and A.D. Kurtz: Appl. Phys. Lett. 62 (1993), p. 2836.
8. J.S. Shor and A.D. Kurtz: J. Electrochem. Soc. 141 (1994), p. 778.
9. J.S. Shor, L. Bemis, A.D. Kurtz, I. Grimberg, B.Z. Weiss, M.F. MacMillan and W.J. Choyke: J. Appl. Phys. 76 (1994), p. 4045.
10. M.F. MacMillan, R.P. Devaty, W.J. Choyke, D.E. Goldstein, J.E. Spanier and A.D. Kurtz: J. Appl. Phys. 80 (1996), p. 2412.
11. J.E. Spanier and I.P. Herman: Phys. Rev B 61 (2000), p. 10437.
12. S.E. Saddow, M. Mybaeva, M.F. MacMillan: SiC: Materials, Processing and Devices, eds. Zhe Chuan Feng and Jian H. Zhao (Taylor & Francis, New York, London, 2004), Chapter 8, pp. 321-385.
13. M. Mynbaeva, A. Titkov, A. Kryganovskii, V. Ratnikov, K. Mynbaev, H. Huhtinen, R. Laiho and V. Dmitriev: Appl. Phys. Lett. 76 (2000), p. 1113.
14. D.J. Diaz, T.L. Williamson, I. Adesida, P.W. Bohn and R.J. Molnar: J. Appl. Phys. 94 (2003), p. 7526.
15. Y. Shishkin, W.J. Choyke and R.P. Devaty, J. Appl. Phys. 96 (2004), p. 2311.
16. G.T. Andrews, M.J. Clouter, B. Mroz, Y. Shishkin, Y. Ke, R.P. Devaty and W.J. Choyke: Mater. Sci. Forum Vols. 457-460, (2004), p. 653.
17. H.J. von Bardeleeben, J.L. Cantin, M. Mynbaeva, S.E. Saddow, Y. Shishkin, R.P. Devaty and W.J. Choyke: Electrochem. Soc Proc. Vol. 2003-02 (2003), p. 39.
18. J.L. Cantin, H.J. von Bardeleben, Y. Shishkin, Y. Ke, R.P. Devaty and W.J. Choyke: Phys. Rev. Lett. 92 (2004), 015502.
19. H.J. von Bardeleben, J.L. Cantin, L. Ke, Y. Shishkin, R.P. Devaty and W.J. Choyke, this Conference (ECSCRM'04-Bologna).
20. A.J. Rosenbloom, Y. Shishkin, D.M. Sipe, Y. Ke, R.P. Devaty and W.J. Choyke: Mater. Sci. Forum Vols. 457-460 (2004), p. 1463.