Microscopic structure and electrical activity of 4H-SiC/SiO2 interface defects: An EPR study of oxidized porous SiC

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1457-1462

  Von Bardeleben, H J ^a   Cantin, J L ^a   Shishkin, Y ^b   Devaty, R P ^b   Choyke, W J ^b  

^a SORBONNE UNIVERSITÉ   (France)

^b UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

Carbon dangling bond center; EPR; Interface defects; Oxide interface

Indexed keywords

CHEMICAL BONDS; CONCENTRATION (PROCESS); CRYSTAL DEFECTS; MICROSCOPIC EXAMINATION; OXIDATION; PARAMAGNETIC RESONANCE; POROUS SILICON; SILICON CARBIDE;

HIGH TEMPERATURE OXIDATION; INTERFACE DEFECTS; MICROSCOPIC STRUCTURE; PARAMAGNETIC RESONANCE SPECTROSCOPY;

INTERFACES (MATERIALS);

EID: 8744261962     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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