Numerical simulation of transconductance of AlGaN/GaN heterojunction field effect transistors at high temperatures

Chinese Physics

Volumn 15, Issue 3, 2006, Pages 636-640

  Chang, Yuan Cheng ^a   Zhang, Yi Men ^a   Zhang, Yu Ming ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

AlGaN GaN GFETs; High temperature; Transconductance

Indexed keywords

ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH TEMPERATURE EFFECTS; POLARIZATION; TRANSCONDUCTANCE;

ALGAN/GAN GFETS; CONDUCTION BAND DISCONTINUITY; HIGH TEMPERATURES; SELF HEATING EFFECTS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 33644637783     PISSN: 10091963     EISSN: 17414199     Source Type: Journal    
DOI: 10.1088/1009-1963/15/3/032     Document Type: Article

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