Channel temperature model for microwave AlGaN/GaN power HEMTs on SiC and sapphire

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 2004, Pages 2031-2034

  Freeman, Jon C ^a  

^a NASA GLENN RESEARCH CENTER   (United States)

Author keywords

AlGaN GaN HEMTs; Power amplifier; Silicon carbide; Thermal model

Indexed keywords

CARRIER MOBILITY; CHANNEL CAPACITY; ENERGY DISSIPATION; GALLIUM NITRIDE; HEAT RESISTANCE; HEAT TRANSFER; MATHEMATICAL MODELS; MICROWAVE DEVICES; PARAMETER ESTIMATION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON CARBIDE; THERMAL CONDUCTIVITY; THERMOGRAPHY (IMAGING);

ALGAN/GAN HEMT; CHANNEL TEMPERATURE; POWER AMPLIFIER; THERMAL MODEL;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 4544288318     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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