Propagation of the SiO2 breakdown event on MOS structures observed with conductive atomic force microscopy

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 265-269

  Porti, M ^a   Nafria M ^a   Aymerich, X ^a   Olbrich, A ^b   Ebersberger, B ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Breakdown propagation; Conductive atomic force microscope; Dielectric breakdown; SiO2 film

Indexed keywords

ATOMIC FORCE MICROSCOPY; DEGRADATION; ELECTRIC BREAKDOWN; MOS DEVICES; SILICA;

DIELECTRIC BREAKDOWN;

ULTRATHIN FILMS;

EID: 0035498674     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00608-6     Document Type: Conference Paper

References (8)