Intrinsic dielectric breakdown of ultra-thin gate oxides

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 33-42

  Lombardo, S ^a  

^a CNR IMETEM   (Italy)

Author keywords

Breakdown damage; Intrinsic dielectric breakdown; Reliability; Ultra thin gate oxides

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRONIC DENSITY OF STATES; SILICA; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS;

ULTRA-THIN GATE OXIDES;

GATES (TRANSISTOR);

EID: 0035498549     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00632-3     Document Type: Conference Paper

References (13)

1. Percolation models for gate oxide breakdown
2. A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides
3. 2-silicon capacitors
4. 2-Si capacitors: Dependence on oxide thickness
5. 2 gate oxide
6. Reliability a possible showstopper for oxide thickness scaling?
7. The statistical distribution of percolation resistance as a probe into the mechanics of ultra-thin oxide breakdown
8. Gate oxide breakdown under current limited constant voltage stress
9. 2-Si capacitors under stress with hot electrons
10. A common framework for soft and hard breakdown in ultrathin oxides based on the theory of the point contact conduction
11. Reduction of thermal damage in ultra-thin gate oxides after intrinsic dielectric breakdown