Modeling silicon dots fabrication using self-limiting oxidation

Microelectronic Engineering

Volumn 57-58, Issue , 2001, Pages 897-901

  Chen, Yijian ^a   Chen, Yishi ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b CLEVELAND STATE UNIVERSITY   (United States)

Author keywords

Extended spherical Deal Grove model; Self limiting oxidation; Silicon dot fabrication

Indexed keywords

BOUNDARY CONDITIONS; DIFFUSION; FLUID MECHANICS; NANOTECHNOLOGY; OXIDATION; SILICON; STRESS ANALYSIS;

SELF-LIMITING OXIDATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0035450727     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00453-1     Document Type: Article

References (5)

1. Modeling of the self-limiting oxidation for nanofabrication of Si
2. Self-limiting oxidation for fabricating sub-5 nm silicon nanowires
3. Oxidation properties of silicon dots on silicon oxide investigated using energy filtering transmission electron microscopy
4. Two-dimensional thermal oxidation of silicon-II. Modeling stress effects in wet oxides
5. Silicon processing