Pulsed laser-induced silicidation on TiN-capped CoSi bilayers

Journal of Applied Physics

Volumn 99, Issue 4, 2006, Pages

  Chow, F L ^a   Lee, P S ^b   Pey, K L ^c   Tang, L J ^d   Tung, C H ^d   Wang, X C ^e   Lim, G C ^e  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^d INSTITUTE OF MICROELECTRONICS   (Singapore)

^e SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; NUCLEATION; PULSED LASER DEPOSITION; SILICON; SUBSTRATES;

COSI BILAYERS; MELT BOUNDARY; SILICIDATION;

TITANIUM COMPOUNDS;

EID: 33644589389     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2171774     Document Type: Article

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