Effects of p/n inhomogeneity on CdZnTe radiation detectors

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4784, Issue , 2003, Pages 237-243

  Chu, M ^a   Terterian, S ^a   Ting, D ^a   James, R B ^b   Szawlowski, M ^c   Visser, G J ^d  

^a Fermionics Corporation   (United States)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c Advanced Photonix Inc   (United States)

^d Nova RandD

Author keywords

Cdte; Cdznte; Defects; Gamma ray detectors; Radiation detectors; Te antisites

Indexed keywords

CADMIUM ALLOYS; DEFECTS; GAMMA RAYS; II-VI SEMICONDUCTORS; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR ALLOYS; X RAYS; ZINC ALLOYS;

BRIDGMAN TECHNIQUES; CDTE; CDZNTE; GAMMA RAY DETECTOR; GROWN FROM THE MELTS; INHOMOGENEITY MODEL; TE ANTISITES; TEMPERATURE RADIATION;

X RAY DETECTORS;

EID: 84879874429     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.457056     Document Type: Conference Paper

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