Defect structure of Sn-doped CdTe

Journal of Electronic Materials

Volumn 32, Issue 7, 2003, Pages 772-777

  Franc, J ^a   Fiederle, M ^b   Babentsov, V ^b,d   Fauler, A ^b   Benz, K W ^b   James, R ^c  

^a CHARLES UNIVERSITY   (Czech Republic)

^b UNIVERSITY OF FREIBURG   (Germany)

^c BROOKHAVEN NATIONAL LABORATORY   (United States)

^d INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

Bridgman technique; Cadmium compounds; Semiconducting II VI materials

Indexed keywords

DEFECTS; DOPING (ADDITIVES); PHOTOELECTRIC DEVICES; PHOTOSENSITIVITY; TIN;

CRYSTAL VOLUME;

CADMIUM COMPOUNDS;

EID: 0042266743     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0069-3     Document Type: Conference Paper

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