Carrier transport properties of HPB CdZnTe and THM CdTe:Cl

IEEE Transactions on Nuclear Science

Volumn 49 II, Issue 3, 2002, Pages 1287-1291

  Suzuki, Kazuhiko ^a   Seto, Satoru ^b   Sawada, Takayuki ^a   Imai, Kazuaki ^a  

^a HOKKAIDO INSTITUTE OF TECHNOLOGY   (Japan)

^b ISHIKAWA NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

CdTe:Cl; CdZnTe; High pressure Bridgman (HPB); Mobility; Time of fight drift

Indexed keywords

CALCULATIONS; CARRIER MOBILITY; CRYSTAL GROWTH; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ITERATIVE METHODS; SEMICONDUCTING CADMIUM TELLURIDE;

BOLTZMANN TRANSPORT EQUATION; CADMIUM ZINC TELLURIDE; HIGH PRESSURE BRIDGMAN METHOD; TIME OF FLIGHT TECHNIQUE; TRAVELING HEATER METHOD;

RADIATION DETECTORS;

EID: 0036624374     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2002.1039653     Document Type: Article

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