Vapor pressure scanning implications of CdTe crystal growth

Journal of Crystal Growth

Volumn 197, Issue 3, 1999, Pages 406-412

  Greenberg, Jacob H ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

CdTe; Crystal growth; Nonstoichiometry; Vapor pressure scanning

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL GROWTH; HIGH TEMPERATURE EFFECTS; MELTING; PHASE EQUILIBRIA; PRESSURE MEASUREMENT; SEMICONDUCTOR GROWTH; VAPOR PRESSURE;

MELTING POINT; VAPOR PRESSURE SCANNING (VPS);

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033514183     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00738-6     Document Type: Article

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