IV group dopant compensation effect in CdTe

Journal of Crystal Growth

Volumn 197, Issue 3, 1999, Pages 607-611

  Panchuk, O ^a   Savitskiy, A ^a   Fochuk, P ^a   Nykonyuk, Ye ^a   Parfenyuk, O ^a   Shcherbak, L ^a   Ilashchuk, M ^a   Yatsunyk, L ^a   Feychuk, P ^a  

^a CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

Author keywords

CdTe; Electrical properties; Ge(Sn) doping; Magnetic properties; Stoichiometry

Indexed keywords

CRYSTAL GROWTH; DIAMAGNETISM; ELECTRIC CONDUCTIVITY OF SOLIDS; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; STOICHIOMETRY; TIN;

DOPANT SELF-COMPENSATION MECHANISMS;

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0033514149     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00798-2     Document Type: Article

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