Electronic structure of Si(001)-c(4x2) analyzed by scanning tunneling spectroscopy and ab initio simulations

Physical Review B - Condensed Matter and Materials Physics

Volumn 73, Issue 3, 2006, Pages

  Nakayama, Koji S ^a,d   Alemany, M M G ^b   Sugano, Tomoko ^a,e   Ohmori, Kenji ^a,f   Kwak, H ^c   Chelikowsky, James R ^c   Weaver, J H ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b UNIVERSITY OF SANTIAGO DE COMPOSTELA   (Spain)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^d TOHOKU UNIVERSITY   (Japan)

^e Japan Patent Office   (Japan)

^f NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33244497381     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.73.035330     Document Type: Article

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